fast ir fet? irfh7194pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 hexfet ? power mosfet v dss 100 v r ds(on) max (@ v gs = 10v) 16.4 m ? q g (typical) 13 nc r g (typical) 2.1 ? i d (@t c (bottom) = 25c) 35 a pqfn 5x6 mm notes ? through ?? are on page 8 base part number package type standard pack orderable part number form quantity irfh7194pbf pqfn 5mm x 6 mm tape and reel 4000 IRFH7194TRPBF features benefits low r ds(on) (< 16.4m ? ) lower conduction losses low thermal resistance to pcb (<3.2c/w) increased power density 100% rg tested increased reliability low profile (<1.05 mm) results in increased power density industry - standard pinout ? multi - vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen - free environmentally friendlier msl1 increased reliability applications ? primary switch for high frequency 48v/60v telecom dc - dc power supplies ? secondary side synchronous rectifier absolute maximum ratings parameter max. units v gs gate - to - source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 11 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 35 i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 22 i dm pulsed drain current ? 140 p d @t a = 25c power dissipation 3.6 w p d @t c(bottom) = 25c power dissipation 39 linear derating factor 0.03 w/c t j operating junction and - 55 to + 150 c t stg storage temperature range downloaded from: http:///
irfh7194pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 thermal resistance parameter typ. max. units r ? jc (bottom) junction - to - case ? CCC 3.2 r ? jc (top) junction - to - case ? CCC 22 c/w r ? ja junction - to - ambient ? CCC 35 r ? ja (<10s) junction - to - ambient ? CCC 20 d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions bv dss drain - to - source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient CCC 78 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain - to - source on - resistance CCC 13.7 16.4 m ? v gs = 10v, i d = 21a ? v gs(th) gate threshold voltage 2.0 CCC 3.6 v v ds = v gs , i d = 50a ? v gs(th) gate threshold voltage coefficient CCC - 5.2 CCC mv/c i dss drain - to - source leakage current CCC CCC 1.0 a v ds = 80v, v gs = 0v i gss gate - to - source forward leakage CCC CCC 100 na v gs = 20v gate - to - source reverse leakage CCC CCC - 100 v gs = - 20v gfs forward transconductance 45 CCC CCC s v ds = 25v, i d = 21a q g total gate charge CCC 13 19 q gs1 pre - vth gate - to - source charge CCC 1.8 CCC v ds = 50v q gs2 post - vth gate - to - source charge CCC 0.9 CCC nc v gs = 10v q gd gate - to - drain charge CCC 4.3 CCC i d = 21a q godr gate charge overdrive CCC 6.0 CCC q sw switch charge (q gs2 + q gd ) CCC 5.2 CCC q oss output charge CCC 40 CCC nc v ds = 50v, v gs = 0v r g gate resistance CCC 2.1 CCC ? t d(on) turn - on delay time CCC 2.7 CCC v dd = 50v, v gs = 10v t r rise time CCC 3.3 CCC ns i d = 21a t d(off) turn - off delay time CCC 8.0 CCC r g = 1.0 ? t f fall time CCC 2.5 CCC c iss input capacitance CCC 733 CCC v gs = 0v c oss output capacitance CCC 374 CCC pf v ds = 50v c rss reverse transfer capacitance CCC 11 CCC ? = 1.0mhz diode characteristics parameter min. typ. max. units conditions i s continuous source current CCC CCC 35 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 140 integral reverse (body diode) ? p - n junction diode. v sd diode forward voltage CCC 0.8 1.3 v t j = 25c, i s = 21a, v gs =0v ? t rr reverse recovery time CCC 30 45 ns t j = 25c, i f = 21a, v dd = 50v q rr reverse recovery charge CCC 26 39 nc di/dt = 100a/s ? avalanche characteristics parameter typ. max. units e as (thermally limited) single pulse avalanche energy ? CCC 220 mj i ar avalanche current ? CCC 12 a downloaded from: http:///
irfh7194pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 fig 1. typical output characteristics fig 4. normalized on - resistance vs. temperature fig 6. typical gate charge vs. gate - to - source voltage fig 5. fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d ra in -to -s o u rce c u rre n t (a ) ? 60s pulse width tj = 25c 3.8v vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.0v bottom 3.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d ra in -to -s o u rce c u rre n t (a ) ? 60s pulse width tj = 150c 3.8v vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.0v bottom 3.8v 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d ra in -to -s o u rc e c u rre n t (a ) v ds = 50v ? 60s pulse width t j = 25c t j = 150c 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a cita n ce (p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 4 8 12 16 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , g a te -to -s o u rce v o lta g e (v ) v ds = 80v v ds = 50v v ds = 20v i d = 21a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s (o n ) , d ra in -to -s o u rc e o n r e s is ta n c e (n o rm a liz e d ) i d = 21a v gs = 10v downloaded from: http:///
irfh7194pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 fig 8. maximum safe operating area fig 7. typical source - drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction - to - case 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i sd , r e ve r se d r a in c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , casetemperature (c) 0 10 20 30 40 i d , d ra in c u rre n t (a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 v gs (th ) g a te th re sh o ld v o lta g e (v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 1000 i d , d ra in -to -s o u rce c u rre n t (a ) tc = 25c tj = 150c single pulse 1msec 10msec 100sec dc operation in this area limited by r ds (on) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e rm a l r e s p o n s e ( z th j c ) c /w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:///
irfh7194pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 fig 12. typical avalanche current vs. pulse width fig 13. on Cresistance vs. gate voltage fig 14. maximum avalanche energy vs. drain current 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 r d s (on ) , d ra in-to -s o urce o n r e sista n ce (m ? ) i d = 21a t j = 25c t j = 125c 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a va la n ch e c u rre n t (a ) allow ed avalanche current vs avalanche pulsew idth, tav, assuming ?? j = 25c and tstart = 125c. (single pulse) allow ed avalanche current vs avalanche pulsew idth, tav, assuming ? tj = 125c and tstart =25c (single pulse) 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s in g le p u lse a va la n ch e e n e rg y (m j) i d top 2.9a 4.6a bottom 12a downloaded from: http:///
irfh7194pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 fig 15. peak diode recovery dv/dt test circuit for n - channel hexfet ? power mosfets fig 18. gate charge test circuit v ds v gs id v gs(th) q gs1 q gs2 q gd q godr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i a s 0 .0 1 ? t p d .u .t l v d s + - v d d d r iv e r a 1 5 v 2 0 v t p v (b r ) d s s i a s fig 16b. unclamped inductive waveforms vdd downloaded from: http:///
irfh7194pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an - 1136: http://www.irf.com/technical - info/appnotes/an - 1136.pdf for more information on package inspection techniques, please refer to application note an - 1154: http://www.irf.com/technical - info/appnotes/an - 1154.pdf downloaded from: http:///
irfh7194pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback september 10, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto - call/ cl pqfn 5x6 outline "b" tape and reel ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability/ ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 3.0mh, r g = 50 ? , i as = 12a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square pcb (fr - 4). please refer to an - 994 for more details: http://www.irf.com/technical - info/appnotes/an - 994.pdf qualifiction information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j - std - 020d ??) rohs compliant yes note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
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